( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells.

, , , , , , , , и . IMW, стр. 1-4. IEEE, (2022)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Maarten Schroen

Maarten Boersma

Maarten Löffler

Maarten Bynens

Maarten Thomas

 

Другие публикации лиц с тем же именем

A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics., , , , , , , , и . IMW, стр. 1-4. IEEE, (2021)Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging., , , , , , и . Sensors, 16 (8): 1294 (2016)Gate Side Injection Operating Mode for 3D NAND Flash Memories., , , , , , , , и . IMW, стр. 1-4. IEEE, (2024)Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique., , , , и . Microelectron. Reliab., 47 (4-5): 508-512 (2007)Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND., , , , , , , и . IMW, стр. 1-4. IEEE, (2023)At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells., , , , , , , , и . IMW, стр. 1-4. IEEE, (2022)Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering., , , , , , , , , и . IMW, стр. 1-4. IEEE, (2023)High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction., , , , , , , , и . IMW, стр. 1-4. IEEE, (2022)Liquid Memory and the Future of Data Storage., , , , , , , , , и 6 other автор(ы). IMW, стр. 1-4. IEEE, (2022)Enabling 3D NAND Trench Cells for Scaled Flash Memories., , , , , , , , и . IMW, стр. 1-4. IEEE, (2023)