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Qualification of 50 V GaN on SiC technology for RF power amplifiers., , , , and . Microelectron. Reliab., 53 (9-11): 1439-1443 (2013)Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs., , , , , and . Microelectron. Reliab., 55 (9-10): 1672-1676 (2015)Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements., , , , and . ESSDERC, page 270-273. IEEE, (2012)Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 52 (9-10): 2200-2204 (2012)Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses., , , , , , , and . Microelectron. Reliab., 41 (9-10): 1573-1578 (2001)Proton induced trapping effect on space compatible GaN HEMTs., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 54 (9-10): 2213-2216 (2014)Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier., , , , , , , , , and 8 other author(s). IRPS, page 51-1. IEEE, (2022)Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations., , , , , , , and . Microelectron. Reliab., 50 (9-11): 1520-1522 (2010)Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing., , , and . Microelectron. Reliab., 55 (12): 2505-2510 (2015)Reliability of high voltage/high power L/S-band Hbt technology., , , , , , , , , and . Microelectron. Reliab., 50 (9-11): 1543-1547 (2010)