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Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.

, , , , , , , , и . Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)

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Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Körner

Enrico Meier

 

Другие публикации лиц с тем же именем

Improving the reliability and safety of automotive electronics., и . IEEE Micro, 13 (1): 30-48 (1993)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells., , , , , , , , , и . IRPS, стр. 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors., , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2020)Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors., , , , , , и . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach., , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2024)Modeling of Substrate Noise Injected by Digital Libraries., , , , , , , и . ISQED, стр. 488-492. IEEE Computer Society, (2001)Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences., , , , , , , , , и 4 other автор(ы). ESSDERC, стр. 381-384. IEEE, (2014)GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse., , , , , , , , , и 2 other автор(ы). IRPS, стр. 11. IEEE, (2022)Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors., , , , , , , , и . IRPS, стр. 2. IEEE, (2015)On the origin of the leakage current in p-gate AlGaN/GaN HEMTs., , , , , , , и . IRPS, стр. 4. IEEE, (2018)