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Disambiguation of "Khwa, Win-San"

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An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices.

, , , , , , , , , , , , , and . ISSCC, page 1-3. IEEE, (2022)

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San San Lin

San San Hmwe

Abdul Hamied Khwaja

Thein Win

Zaw Win

 

Other publications of authors with the same name

Circuit design for beyond von Neumann applications using emerging memory: From nonvolatile logics to neuromorphic computing., , , , , , , , , and . ISQED, page 23-28. IEEE, (2017)A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices., , , , , , , , , and 8 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices., , , , , , , , , and 5 other author(s). ISSCC, page 568-570. IEEE, (2024)29.1 A 40nm 64Kb 56.67TOPS/W Read-Disturb-Tolerant Compute-in-Memory/Digital RRAM Macro with Active-Feedback-Based Read and In-Situ Write Verification., , , , , and . ISSCC, page 404-406. IEEE, (2021)An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices., , , , , , , , , and 4 other author(s). ISSCC, page 1-3. IEEE, (2022)A 7-nm Compute-in-Memory SRAM Macro Supporting Multi-Bit Input, Weight and Output and Achieving 351 TOPS/W and 372.4 GOPS., , , , , , , , and . IEEE J. Solid State Circuits, 56 (1): 188-198 (2021)A Heterogeneous RRAM In-Memory and SRAM Near-Memory SoC for Fused Frame and Event-Based Target Identification and Tracking., , , , , , , , , and 1 other author(s). IEEE J. Solid State Circuits, 59 (1): 52-64 (January 2024)A 2.38 MCells/mm2 9.81 -350 TOPS/W RRAM Compute-in-Memory Macro in 40nm CMOS with Hybrid Offset/IOFF Cancellation and ICELL RBLSL Drop Mitigation., , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)A 65nm 4Kb algorithm-dependent computing-in-memory SRAM unit-macro with 2.3ns and 55.8TOPS/W fully parallel product-sum operation for binary DNN edge processors., , , , , , , , , and 1 other author(s). ISSCC, page 496-498. IEEE, (2018)A 73.53TOPS/W 14.74TOPS Heterogeneous RRAM In-Memory and SRAM Near-Memory SoC for Hybrid Frame and Event-Based Target Tracking., , , , , , , , , and 1 other author(s). ISSCC, page 426-427. IEEE, (2023)