( en | de | ru )

 

Disambiguation of "Hung, Je-Min"

Author of the publication

copydeleteadd this publication to your clipboard
A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices.

, , , , , , , , , , , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Jakub Je ábek

Sang-Je Cho

Je-Geun Yoo

Je-Hyung Lee

Sam Rok Je

 

Other publications of authors with the same name

A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W., , , , , , , , , and 6 other author(s). ISSCC, page 258-259. IEEE, (2023)8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices., , , , , , , , , and 4 other author(s). IEEE J. Solid State Circuits, 58 (1): 303-315 (2023)A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices., , , , , , , , , and 8 other author(s). ISSCC, page 245-247. IEEE, (2021)A 4-Kb 1-to-8-bit Configurable 6T SRAM-Based Computation-in-Memory Unit-Macro for CNN-Based AI Edge Processors., , , , , , , , , and 8 other author(s). IEEE J. Solid State Circuits, 55 (10): 2790-2801 (2020)A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices., , , , , , , , , and 8 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices., , , , , , , , , and 4 other author(s). ISSCC, page 1-3. IEEE, (2022)13.4 A 22nm 1Mb 1024b-Read and Near-Memory-Computing Dual-Mode STT-MRAM Macro with 42.6GB/s Read Bandwidth for Security-Aware Mobile Devices., , , , , , , , , and 2 other author(s). ISSCC, page 224-226. IEEE, (2020)