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Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

, , , , , , , , и . IRPS, стр. 2. IEEE, (2015)

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Tanja Elisabeth Peters

George Gershwins und Jerome Kerns Musicalsongs: ihre Ähnlichkeit, Wahrnehmung und musikalische Struktur. Uni Köln, (2008)

Andre Peters

Description and determination of soil hydraulic properties on the laboratory scale. TU Braunschweig, (2008)

Jillian Petersen

Diversity and ecology of chemosynthetic symbioses in deep-sea invertebrates. Uni Bremen, (2009)

Robert Martin Peterreins

Musikhörfähigkeit von Patienten mit elektroakustischer Stimulation: Testung anhand des Mu.S.I.C.-Tests. TU München, (2009)

Hans-Dieter Petersen

 

Другие публикации лиц с тем же именем

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron., , , , , и . ESSDERC, стр. 130-133. IEEE, (2017)The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study., , , , , , , и . IRPS, стр. 1-5. IEEE, (2023)µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate., , , , , , , , и . IRPS, стр. 1-6. IEEE, (2019)Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature., , , , , , , , и . IRPS, стр. 5. IEEE, (2022)A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability., и . IRPS, стр. 1-6. IEEE, (2019)High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C., , , , , и . ESSDERC, стр. 306-309. IEEE, (2012)Integration of an SCR in an active clamp., и . Microelectron. Reliab., 47 (7): 1054-1059 (2007)Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions., , , , , , , , , и . IRPS, стр. 1-4. IEEE, (2020)Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors., , , , , , , и . IRPS, стр. 1-6. IEEE, (2019)Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements., , , , , , , и . IRPS, стр. 1-5. IEEE, (2024)