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Mitigating switching variability in carbon nanotube memristors.

, , , , , , , , , , , , и . IRPS, стр. 1-4. IEEE, (2021)

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Rabe al-Sayed al-Sayed Serag

El Sayed Lashine

Amr El-Sayed

Adel El-Sayed

El-Sayed Aboulkhair

 

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Mitigating switching variability in carbon nanotube memristors., , , , , , , , , и 3 other автор(ы). IRPS, стр. 1-4. IEEE, (2021)On the volatility of oxide defects: Activation, deactivation, and transformation., , , , , , и . IRPS, стр. 5. IEEE, (2015)Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films., , , , , и . IRPS, стр. 5. IEEE, (2018)Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-7. IEEE, (2019)Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface., , , , , и . ESSDERC, стр. 235-238. IEEE, (2021)Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence., , , , , , и . Microelectron. Reliab., (2018)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 262-265. IEEE, (2019)Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics., , , , , , , , , и 2 other автор(ы). IRPS, стр. 36-1. IEEE, (2022)Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors., , , , , , , , , и 2 other автор(ы). IRPS, стр. 6. IEEE, (2022)Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study., , , , , и . ESSDERC, стр. 380-383. IEEE, (2022)