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3-Layer stacked pixel-parallel CMOS image sensors using hybrid bonding of SOI wafers.

, , , , , , , , and . Imaging Sensors and Systems, page 1-4. Society for Imaging Science and Technology, (2022)

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Emerging nanoscale silicon devices taking advantage of nanostructure physics., , and . IBM J. Res. Dev., 50 (4-5): 411-418 (2006)Parallel nonvolatile programming of power-up states of SRAM cells., , , and . ASICON, page 418-421. IEEE, (2017)A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices., , , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)Recent Progress of Double/Dual-Gate Silicon IGBT Technologies., and . ASICON, page 1-4. IEEE, (2021)Ultra-low-voltage operation: device perspective.. ISLPED, page 59-60. IEEE/ACM, (2011)An Architectural Study for Inference Coprocessor Core at the Edge in IoT Sensing., , , , , , , , and . AICAS, page 305-309. IEEE, (2020)3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)., , , , , , , , , and 12 other author(s). ASICON, page 1137-1140. IEEE, (2017)A 1.5-ns 256-kb BiCMOS SRAM with 60-ps 11-K logic gates., , , , , , , , , and 11 other author(s). IEEE J. Solid State Circuits, 29 (11): 1344-1352 (November 1994)Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs., , and . IEICE Trans. Electron., 96-C (5): 630-633 (2013)Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately., , , , , , , , , and 8 other author(s). ESSDERC, page 26-29. IEEE, (2018)