( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
Effect of oxide breakdown on RS latches.

, , , и . Microelectron. Reliab., 47 (4-5): 581-584 (2007)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Xavier Domont

Xavier Lambin

Xavier Fontaine

Arumainathan Xavier

Xavier Leroy

 

Другие публикации лиц с тем же именем

Unified characterization of RTN and BTI for circuit performance and variability simulation., , , , и . ESSDERC, стр. 266-269. IEEE, (2012)Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures., , , , , , , , , и 1 other автор(ы). Microelectron. Reliab., 52 (9-10): 2110-2114 (2012)Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale., , , , , и . Microelectron. Reliab., 49 (9-11): 1188-1191 (2009)A new approach to the modeling of oxide breakdown on CMOS circuits., , , и . Microelectron. Reliab., 44 (9-11): 1519-1522 (2004)Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs., , , , , , и . Microelectron. Reliab., 52 (9-10): 1924-1927 (2012)Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror., , , , и . Microelectron. Reliab., 47 (4-5): 665-668 (2007)Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics., , , и . Microelectron. Reliab., 45 (5-6): 861-864 (2005)Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM., , , , и . Microelectron. Reliab., 45 (5-6): 811-814 (2005)Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale., , , и . Microelectron. Reliab., 45 (9-11): 1390-1393 (2005)Investigation of Conductivity Changes in Memristors under Massive Pulsed Characterization., , , , и . DCIS, стр. 1-4. IEEE, (2018)