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Unified characterization of RTN and BTI for circuit performance and variability simulation., , , , and . ESSDERC, page 266-269. IEEE, (2012)Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 52 (9-10): 2110-2114 (2012)Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale., , , , , and . Microelectron. Reliab., 49 (9-11): 1188-1191 (2009)A new approach to the modeling of oxide breakdown on CMOS circuits., , , and . Microelectron. Reliab., 44 (9-11): 1519-1522 (2004)Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs., , , , , , and . Microelectron. Reliab., 52 (9-10): 1924-1927 (2012)Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror., , , , and . Microelectron. Reliab., 47 (4-5): 665-668 (2007)Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics., , , and . Microelectron. Reliab., 45 (5-6): 861-864 (2005)Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM., , , , and . Microelectron. Reliab., 45 (5-6): 811-814 (2005)Investigation of Conductivity Changes in Memristors under Massive Pulsed Characterization., , , , and . DCIS, page 1-4. IEEE, (2018)Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale., , , and . Microelectron. Reliab., 45 (9-11): 1390-1393 (2005)