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Modeling FinFET metal gate stack resistance for 14nm node and beyond., , , , , , , , и . ICICDT, стр. 1-4. IEEE, (2015)Clock tree optimization in synchronous CMOS digital circuits for substrate noise reduction using folding of supply current transients., , , , , , и . DAC, стр. 399-404. ACM, (2002)Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies., , , , , , , , , и 5 other автор(ы). ISSCC, стр. 528-529. IEEE, (2008)Flicker noise upconversion mechanisms in K-band CMOS VCOs., , , и . A-SSCC, стр. 1-4. IEEE, (2015)A 400 μW 4.7-to-6.4GHz VCO under an Above-IC Inductor in 45nm CMOS., , , , и . ISSCC, стр. 536-537. IEEE, (2008)Inductor-based ESD protection under CDM-like ESD stress conditions for RF applications., , , , , , , и . CICC, стр. 49-52. IEEE, (2008)An up to 36Gbps analog baseband equalizer and demodulator for mm-wave wireless communication in 28nm CMOS., , , и . CICC, стр. 1-4. IEEE, (2017)A CMOS IQ direct digital RF modulator with embedded RF FIR-based quantization noise filter., , , и . ESSCIRC, стр. 139-142. IEEE, (2011)A 54-64.8 GHz subharmonically injection-locked frequency synthesizer with transmitter EVM between -26.5 dB and -28.8 dB in 28 nm CMOS., , , , , и . ESSCIRC, стр. 243-246. IEEE, (2017)A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C., , , и . ESSCIRC, стр. 183-186. IEEE, (2014)