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Parallel nonvolatile programming of power-up states of SRAM cells., , , и . ASICON, стр. 418-421. IEEE, (2017)Emerging nanoscale silicon devices taking advantage of nanostructure physics., , и . IBM J. Res. Dev., 50 (4-5): 411-418 (2006)Recent Progress of Double/Dual-Gate Silicon IGBT Technologies., и . ASICON, стр. 1-4. IEEE, (2021)A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices., , , , , , , , , и . VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Ultra-low-voltage operation: device perspective.. ISLPED, стр. 59-60. IEEE/ACM, (2011)An Architectural Study for Inference Coprocessor Core at the Edge in IoT Sensing., , , , , , , , и . AICAS, стр. 305-309. IEEE, (2020)3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)., , , , , , , , , и 12 other автор(ы). ASICON, стр. 1137-1140. IEEE, (2017)Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs., , и . IEICE Trans. Electron., 96-C (5): 630-633 (2013)A 1.5-ns 256-kb BiCMOS SRAM with 60-ps 11-K logic gates., , , , , , , , , и 11 other автор(ы). IEEE J. Solid State Circuits, 29 (11): 1344-1352 (ноября 1994)Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately., , , , , , , , , и 8 other автор(ы). ESSDERC, стр. 26-29. IEEE, (2018)