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Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits., , , , , , , , and . IEICE Trans. Electron., 93-C (5): 608-613 (2010)Implementation of a perpendicular MTJ-based read-disturb-tolerant 2T-2R nonvolatile TCAM based on a reversed current reading scheme., , , , , , and . ASP-DAC, page 475-476. IEEE, (2012)Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage., , , , , , , , , and 10 other author(s). VLSI Circuits, page 1-2. IEEE, (2020)Complementary 5T-4MTJ nonvolatile TCAM cell circuit with phase-selective parallel writing scheme., , , , , , , and . IEICE Electron. Express, 11 (10): 20140297 (2014)Design of an energy-efficient 2T-2MTJ nonvolatile TCAM based on a parallel-serial-combined search scheme., , , , and . IEICE Electron. Express, 11 (3): 20131006 (2014)An Overview of Nonvolatile Emerging Memories - Spintronics for Working Memories., , , , and . IEEE J. Emerg. Sel. Topics Circuits Syst., 6 (2): 109-119 (2016)10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications., , , , , , , , , and 4 other author(s). ISSCC, page 184-185. IEEE, (2014)A full-stack view of probabilistic computing with p-bits: devices, architectures and algorithms., , , , , , , , , and 2 other author(s). CoRR, (2023)Double-Free-Layer Stochastic Magnetic Tunnel Junctions with Synthetic Antiferromagnets., , , , , and . CoRR, (2023)Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature, , , , and . Japanese Journal of Applied Physics, 44 (19): 587-589 (2005)