From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Double-Free-Layer Stochastic Magnetic Tunnel Junctions with Synthetic Antiferromagnets., , , , , и . CoRR, (2023)A full-stack view of probabilistic computing with p-bits: devices, architectures and algorithms., , , , , , , , , и 2 other автор(ы). CoRR, (2023)A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing., , , , , , , , , и 5 other автор(ы). ISCAS, стр. 1588-1591. IEEE, (2014)10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications., , , , , , , , , и 4 other автор(ы). ISSCC, стр. 184-185. IEEE, (2014)Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage., , , , , , , , , и 10 other автор(ы). VLSI Circuits, стр. 1-2. IEEE, (2020)Double Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits., , , , и . CoRR, (2020)A 90nm 12ns 32Mb 2T1MTJ MRAM., , , , , , , , , и 10 other автор(ы). ISSCC, стр. 462-463. IEEE, (2009)Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure., , , , , , , , , и 1 other автор(ы). VLSIC, стр. 172-. IEEE, (2015)High-speed simulator including accurate MTJ models for spintronics integrated circuit design., , , , , , , , , и 1 other автор(ы). ISCAS, стр. 1971-1974. IEEE, (2012)Advances in spintronics devices for microelectronics - From spin-transfer torque to spin-orbit torque., , , , , и . ASP-DAC, стр. 684-691. IEEE, (2014)