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A configurable 2-in-1 SRAM compiler with constant-negative-level write driver for low Vmin in 16nm Fin-FET CMOS.

, , , , , and . A-SSCC, page 145-148. IEEE, (2014)

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A 64-Kb 0.37V 28nm 10T-SRAM with mixed-Vth read-port and boosted WL scheme for IoT applications., , , , , , , and . A-SSCC, page 185-188. IEEE, (2016)13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications., , , , , , , , , and 4 other author(s). ISSCC, page 238-239. IEEE, (2014)15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications., , , , , , , and . ISSCC, page 242-244. IEEE, (2020)An offset-tolerant current-sampling-based sense amplifier for Sub-100nA-cell-current nonvolatile memory., , , , , , , , , and 3 other author(s). ISSCC, page 206-208. IEEE, (2011)A 5-nm 254-TOPS/W 221-TOPS/mm2 Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations., , , , , , , , , and 8 other author(s). ISSCC, page 1-3. IEEE, (2022)17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies., , , , , , , , , and 2 other author(s). ISSCC, page 1-3. IEEE, (2015)A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications., , , , , , , , , and 5 other author(s). ISSCC, page 316-317. IEEE, (2013)A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 50 (1): 170-177 (2015)An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory., , , , , , , , , and . IEEE J. Solid State Circuits, 48 (3): 864-877 (2013)A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications., , , , , , , , , and 8 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)