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An offset-tolerant current-sampling-based sense amplifier for Sub-100nA-cell-current nonvolatile memory.

M. Chang, S. Shen, C. Liu, C. Wu, Y. Lin, S. Wu, C. Huang, H. Lai, Y. King, C. Lin, H. Liao, Y. Chih, and H. Yamauchi. ISSCC, page 206-208. IEEE, (2011)

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Ya Zhang

Elion Chin

Erika Chin

Ya Yang

Chin Buranadham

Other publications of authors with the same name

A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time.M. Chang, C. Wu, C. Kuo, S. Shen, K. Lin, S. Yang, Y. King, C. Lin, and Y. Chih. ISSCC, page 434-436. IEEE, (2012)High Density Embedded 3D Stackable Via RRAM in Advanced MCU Applications.Y. Huang, Y. Hsieh, Y. Lin, Y. Chih, E. Wang, J. Chang, Y. King, and C. Lin. VLSI Technology and Circuits, page 1-2. IEEE, (2023)A novel single poly-silicon EEPROM using trench floating gate.M. Wu, S. Feng, and Y. King. MTDT, page 35-37. IEEE Computer Society, (2005)An offset-tolerant current-sampling-based sense amplifier for Sub-100nA-cell-current nonvolatile memory.M. Chang, S. Shen, C. Liu, C. Wu, Y. Lin, S. Wu, C. Huang, H. Lai, Y. King, C. Lin and 3 other author(s). ISSCC, page 206-208. IEEE, (2011)Low VDDmin Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations.M. Chang, J. Wu, T. Chien, Y. Liu, T. Yang, W. Shen, Y. King, C. Lin, K. Lin, Y. Chih and 1 other author(s). IEEE J. Solid State Circuits, 50 (11): 2786-2795 (2015)An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory.M. Chang, S. Shen, C. Liu, C. Wu, Y. Lin, Y. King, C. Lin, H. Liao, Y. Chih, and H. Yamauchi. IEEE J. Solid State Circuits, 48 (3): 864-877 (2013)7.4 A 256b-wordlength ReRAM-based TCAM with 1ns search-time and 14× improvement in wordlength-energyefficiency-density product using 2.5T1R cell.C. Lin, J. Hung, W. Lin, C. Lo, Y. Chiang, H. Tsai, G. Yang, Y. King, C. Lin, T. Chen and 1 other author(s). ISSCC, page 136-137. IEEE, (2016)4.7 A 65nm ReRAM-enabled nonvolatile processor with 6× reduction in restore time and 4× higher clock frequency using adaptive data retention and self-write-termination nonvolatile logic.Y. Liu, Z. Wang, A. Lee, F. Su, C. Lo, Z. Yuan, C. Lin, Q. Wei, Y. Wang, Y. King and 5 other author(s). ISSCC, page 84-86. IEEE, (2016)A low-power subthreshold-to-superthreshold level-shifter for sub-0.5V embedded resistive RAM (ReRAM) macro in ultra low-voltage chips.M. Chang, C. Wu, J. Hung, Y. King, C. Lin, M. Ho, C. Kuo, and S. Sheu. APCCAS, page 695-698. IEEE, (2014)A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors.W. Chen, K. Li, W. Lin, K. Hsu, P. Li, C. Yang, C. Xue, E. Yang, Y. Chen, Y. Chang and 7 other author(s). ISSCC, page 494-496. IEEE, (2018)

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Disambiguation of "King, Ya-Chin"

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An offset-tolerant current-sampling-based sense amplifier for Sub-100nA-cell-current nonvolatile memory.

Please choose a person to relate this publication to

Ya Zhang

Elion Chin

Erika Chin

Ya Yang

Chin Buranadham

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "King, Ya-Chin"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML An offset-tolerant current-sampling-based sense amplifier for Sub-100nA-cell-current nonvolatile memory.

Please choose a person to relate this publication to

Ya Zhang

Elion Chin

Erika Chin

Ya Yang

Chin Buranadham

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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URL
DOI
BibTeX
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APA
Chicago
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An offset-tolerant current-sampling-based sense amplifier for Sub-100nA-cell-current nonvolatile memory.