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12.3 A low-power and high-performance 10nm SRAM architecture for mobile applications., , , , , , , , , и 4 other автор(ы). ISSCC, стр. 210-211. IEEE, (2017)A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing., , , , , , , , , и 1 other автор(ы). VLSI Circuits, стр. 1-2. IEEE, (2021)A Dual-Core Multi-Threaded Xeon Processor with 16MB L3 Cache., , , , и . ISSCC, стр. 315-324. IEEE, (2006)F2: 3D stacking technologies for image sensors and memories., , , , , и . ISSCC, стр. 512-513. IEEE, (2014)EE5: When will we stop driving our cars?, , , , и . ISSCC, стр. 524. IEEE, (2017)Comparison of child-human and child-computer interactions based on manual annotations., , , и . WOCCI, стр. 49-54. ISCA, (2009)Not-So-Latent Dirichlet Allocation: Collapsed Gibbs Sampling Using Human Judgments.. Mturk@HLT-NAACL, стр. 131-138. Association for Computational Linguistics, (2010)A 64-Kb 0.37V 28nm 10T-SRAM with mixed-Vth read-port and boosted WL scheme for IoT applications., , , , , , , и . A-SSCC, стр. 185-188. IEEE, (2016)A Reliable, Low-Cost, Low-Energy Physically Unclonable Function Circuit Through Effective Filtering., , , , , и . VLSI-DAT, стр. 1-4. IEEE, (2019)High Density Embedded 3D Stackable Via RRAM in Advanced MCU Applications., , , , , , , и . VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)