( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
Computing with ferroelectric FETs: Devices, models, systems, and applications.

, , , , , , , , , , , , , , , , , , и . DATE, стр. 1289-1298. IEEE, (2018)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Hermann Breyer

Friedrich Breyer

Hans Breyer

Friedhelm Breyer

Felix Breyer

 

Другие публикации лиц с тем же именем

FeFET based Logic-in-Memory: an overview., , , , , и . DTIS, стр. 1-6. IEEE, (2021)Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology., , , и . ISCAS, стр. 1-5. IEEE, (2018)Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays., , , и . ISCAS, стр. 1-5. IEEE, (2020)Simulation of integrate-and-fire neuron circuits using HfO2-based ferroelectric field effect transistors., , , , , , , и . ICECS, стр. 229-232. IEEE, (2019)C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory., , , , и . CoRR, (2022)Adoption of 2T2C ferroelectric memory cells for logic operation., , , , , и . ICECS, стр. 791-794. IEEE, (2019)Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory., , , , , , , , и . ESSDERC, стр. 118-121. IEEE, (2019)Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices., , , , , , , , , и 2 other автор(ы). VLSI-SoC, стр. 180-183. IEEE, (2018)Computing with ferroelectric FETs: Devices, models, systems, and applications., , , , , , , , , и 9 other автор(ы). DATE, стр. 1289-1298. IEEE, (2018)