Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices.

I. O'Connor, M. Cantan, C. Marchand, B. Vilquin, S. Slesazeck, E. Breyer, H. Mulaosmanovic, T. Mikolajick, B. Giraud, J. Noel, A. Ionescu, and I. Stolichnov. VLSI-SoC, page 180-183. IEEE, (2018)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Hermann Breyer

Friedrich Breyer

Hans Breyer

Friedhelm Breyer

Felix Breyer

Other publications of authors with the same name

FeFET based Logic-in-Memory: an overview.C. Marchand, I. O'Connor, M. Cantan, E. Breyer, S. Slesazeck, and T. Mikolajick. DTIS, page 1-6. IEEE, (2021)Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology.E. Breyer, H. Mulaosmanovic, S. Slesazeck, and T. Mikolajick. ISCAS, page 1-5. IEEE, (2018)Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays.E. Breyer, H. Mulaosmanovic, S. Slesazeck, and T. Mikolajick. ISCAS, page 1-5. IEEE, (2020)Simulation of integrate-and-fire neuron circuits using HfO2-based ferroelectric field effect transistors.B. Suresh, M. Bertele, E. Breyer, P. Klein, H. Mulaosmanovic, T. Mikolajick, S. Slesazeck, and E. Chicca. ICECS, page 229-232. IEEE, (2019)C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory.M. Dahan, E. Breyer, S. Slesazeck, T. Mikolajick, and S. Kvatinsky. CoRR, (2022)Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory.E. Breyer, H. Mulaosmanovic, J. Trommer, T. Melde, S. Dünkel, M. Trentzsch, S. Beyer, T. Mikolajick, and S. Slesazeck. ESSDERC, page 118-121. IEEE, (2019)Adoption of 2T2C ferroelectric memory cells for logic operation.T. Ravsher, H. Mulaosmanovic, E. Breyer, V. Havel, T. Mikolajick, and S. Slesazeck. ICECS, page 791-794. IEEE, (2019)Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices.I. O'Connor, M. Cantan, C. Marchand, B. Vilquin, S. Slesazeck, E. Breyer, H. Mulaosmanovic, T. Mikolajick, B. Giraud, J. Noel and 2 other author(s). VLSI-SoC, page 180-183. IEEE, (2018)Computing with ferroelectric FETs: Devices, models, systems, and applications.A. Aziz, E. Breyer, A. Chen, X. Chen, S. Datta, S. Gupta, M. Hoffmann, X. Hu, A. Ionescu, M. Jerry and 9 other author(s). DATE, page 1289-1298. IEEE, (2018)

BibSonomy

Disambiguation of "Breyer, Evelyn T."

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices.

Please choose a person to relate this publication to

Hermann Breyer

Friedrich Breyer

Hans Breyer

Friedhelm Breyer

Felix Breyer

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Breyer, Evelyn T."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices.

Please choose a person to relate this publication to

Hermann Breyer

Friedrich Breyer

Hans Breyer

Friedhelm Breyer

Felix Breyer

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices.