Author of the publication

Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays.

, , , and . ISCAS, page 1-5. IEEE, (2020)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications., , , , , , , , , and 3 other author(s). IMW, page 1-4. IEEE, (2023)Reliability Assesement of Ferroelectric nvCAP for Small-Signal Capacitive Read-Out., , , , and . IRPS, page 1-5. IEEE, (2024)Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory., , , , , , , , and . ESSDERC, page 118-121. IEEE, (2019)Characterization and modeling of innovative solid-state memory technologies.. Polytechnic University of Milan, Italy, (2016)Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices., , , , , , , , , and 2 other author(s). VLSI-SoC, page 180-183. IEEE, (2018)Computing with ferroelectric FETs: Devices, models, systems, and applications., , , , , , , , , and 9 other author(s). DATE, page 1289-1298. IEEE, (2018)Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays., , , and . ISCAS, page 1-5. IEEE, (2020)Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories., , , , , and . IRPS, page 1-6. IEEE, (2021)Impact of field cycling on HfO2 based non-volatile memory devices., , , , , , , , , and 10 other author(s). ESSDERC, page 364-368. IEEE, (2016)Data regeneration and disturb immunity of T-RAM cells., , , , , , , , and . ESSDERC, page 46-49. IEEE, (2014)