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Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.

F. Chiocchetta, C. Calascione, C. Santi, C. Sharma, F. Rampazzo, X. Zheng, B. Romanczyk, M. Guidry, H. Li, S. Keller, U. Mishra, G. Meneghesso, M. Meneghini, and E. Zanoni. IRPS, page 1-2. IEEE, (2021)

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Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Streit

Enrico Körner

Other publications of authors with the same name

Improving the reliability and safety of automotive electronics.E. Zanoni, and P. Pavan. IEEE Micro, 13 (1): 30-48 (1993)Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.F. Danesin, F. Zanon, S. Gerardin, F. Rampazzo, G. Meneghesso, E. Zanoni, and A. Paccagnella. Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells.M. Barbato, M. Meneghini, A. Cester, A. Barbato, E. Zanoni, G. Meneghesso, G. Mura, D. Tonini, A. Voltan, and G. Cellere. IRPS, page 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.K. Mukherjee, C. Santi, G. Meneghesso, E. Zanoni, M. Meneghini, S. You, K. Geens, M. Borga, B. Bakeroot, and S. Decoutere. IRPS, page 1-5. IEEE, (2020)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.M. Boito, M. Fregolent, C. Santi, A. Abbisogni, S. Smerzi, I. Rossetto, F. Iucolano, G. Meneghesso, E. Zanoni, and M. Meneghini. IRPS, page 1-5. IEEE, (2024)Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs.D. Bisi, A. Stocco, M. Meneghini, F. Rampazzo, A. Cester, G. Meneghesso, and E. Zanoni. ESSDERC, page 389-392. IEEE, (2014)High performance high reliability AlN/GaN DHFET.F. Medjdoub, E. Okada, B. Grimbert, D. Ducatteau, R. Silvestri, M. Meneghini, E. Zanoni, and G. Meneghesso. ESSDERC, page 146-149. IEEE, (2014)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.S. Stoffels, N. Posthuma, S. Decoutere, B. Bakeroot, A. Tallarico, E. Sangiorgi, C. Fiegna, J. Zheng, X. Ma, M. Borga and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Degradation of vertical GaN FETs under gate and drain stress.M. Ruzzarin, M. Meneghini, C. Santi, G. Meneghesso, E. Zanoni, M. Sun, and T. Palacios. IRPS, page 4. IEEE, (2018)Thermally-activated failure mechanisms of 0.25 \ m$ RF AIGaN/GaN HEMTs submitted to long-term life tests.Z. Gao, F. Chiocchetta, F. Rampazzo, C. Santi, M. Fornasier, G. Meneghesso, M. Meneghini, and E. Zanoni. IRPS, page 1-5. IEEE, (2023)

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Disambiguation of "Zanoni, Enrico"

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Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.

Please choose a person to relate this publication to

Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Streit

Enrico Körner

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Zanoni, Enrico"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.

Please choose a person to relate this publication to

Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Streit

Enrico Körner

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
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APA
Chicago
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Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.