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Disambiguation of "Meneghesso, Gaudenzio"

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Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.

, , , , , , , , , , , , , and . ESSDERC, page 381-384. IEEE, (2014)

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Investigation methods and approaches for alleviating charge trapping phenomena in ohmic RF-MEMS switches submitted to cycling test., , , , , and . Microelectron. Reliab., 51 (9-11): 1887-1891 (2011)Backside Failure Analysis of GaAs ICs after ESD tests., , , , and . Microelectron. Reliab., 42 (9-11): 1293-1298 (2002)Long-term stresses on linear micromirrors for pico projector application., , , , , , and . Microelectron. Reliab., (2017)Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting., , , , , , and . RTSI, page 154-156. IEEE, (2015)Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs., , , , , , and . ESSDERC, page 389-392. IEEE, (2014)High performance high reliability AlN/GaN DHFET., , , , , , , and . ESSDERC, page 146-149. IEEE, (2014)Current crowding as a major cause for InGaN LED degradation at extreme high current density., , , , , and . IECON, page 1-6. IEEE, (2021)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability., , , , , , , , , and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs., , , , , , , , , and 4 other author(s). IRPS, page 1-2. IEEE, (2021)Degradation of vertical GaN FETs under gate and drain stress., , , , , , and . IRPS, page 4. IEEE, (2018)