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Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences., , , , , , , , , and 4 other author(s). ESSDERC, page 381-384. IEEE, (2014)1GigaRad TID impact on 28 nm HEP analog circuits., , , , , , and . Integr., (2018)Sensitivity Evaluation of TMR-Hardened Circuits to Multiple SEUs Induced by Alpha Particles in Commercial SRAM-Based FPGAs., , , , , and . DFT, page 79-86. IEEE Computer Society, (2007)Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors., , , , , , and . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)High-reliability fault tolerant digital systems in nanometric technologies: Characterization and design methodologies., , , , , , , , , and 5 other author(s). DFT, page 121-125. IEEE Computer Society, (2012)Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions., , , , , , and . IOLTS, page 146-151. IEEE Computer Society, (2007)On the Evaluation of Radiation-Induced Transient Faults in Flash-Based FPGAs., , , , , , and . IOLTS, page 135-140. IEEE Computer Society, (2008)Soft errors in floating gate memory cells: A review., and . Microelectron. Reliab., 55 (1): 24-30 (2015)DfT Reuse for Low-Cost Radiation Testing of SoCs: A Case Study., , , , , , and . VTS, page 276-281. IEEE Computer Society, (2009)Single Phase Clock Based Radiation Tolerant D Flip-flop Circuit., , , , , and . IOLTS, page 1-6. IEEE, (2020)