( en | de | ru )

 

Disambiguation of "Rampazzo, Fabiana"

Author of the publication

copydeleteadd this publication to your clipboard
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.

, , , , , , , , , , , , , and . ESSDERC, page 381-384. IEEE, (2014)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Nicola Rampazzo

Fabiana Cossavella

Fabiana Ganz

Fabiana Ziper

Fabiana Perocchi

 

Other publications of authors with the same name

Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors., , , , , , and . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs., , , , , , and . ESSDERC, page 389-392. IEEE, (2014)Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs., , , , , , , , , and 4 other author(s). IRPS, page 1-2. IEEE, (2021)Thermally-activated failure mechanisms of 0.25 \ m$ RF AIGaN/GaN HEMTs submitted to long-term life tests., , , , , , , and . IRPS, page 1-5. IEEE, (2023)Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs., , , , , , , , , and 7 other author(s). Microelectron. Reliab., 55 (9-10): 1662-1666 (2015)Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier., , , , , , , , , and 8 other author(s). IRPS, page 51-1. IEEE, (2022)Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling., , , , , , , , , and 1 other author(s). IRPS, page 1-10. IEEE, (2020)Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects., , , , , , , , , and 3 other author(s). IRPS, page 5. IEEE, (2024)Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences., , , , , , , , , and 4 other author(s). ESSDERC, page 381-384. IEEE, (2014)GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse., , , , , , , , , and 2 other author(s). IRPS, page 11. IEEE, (2022)