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Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.

I. Rossetto, M. Meneghini, G. Meneghesso, and E. Zanoni. Microelectron. Reliab., 53 (9-11): 1456-1460 (2013)

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Silvana Rossetto

Isabella Schorsch

Isabella Kamp

Isabella Gayer

Isabella Kleiber

Other publications of authors with the same name

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.M. Boito, M. Fregolent, C. Santi, A. Abbisogni, S. Smerzi, I. Rossetto, F. Iucolano, G. Meneghesso, E. Zanoni, and M. Meneghini. IRPS, page 1-5. IEEE, (2024)Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.D. Bisi, A. Stocco, I. Rossetto, M. Meneghini, F. Rampazzo, A. Chini, F. Soci, A. Pantellini, C. Lanzieri, P. Gamarra and 7 other author(s). Microelectron. Reliab., 55 (9-10): 1662-1666 (2015)Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.G. Meneghesso, M. Meneghini, D. Bisi, I. Rossetto, T. Wu, M. Hove, D. Marcon, S. Stoffels, S. Decoutere, and E. Zanoni. Microelectron. Reliab., (2016)ESD sensitivity of a GaAs MMIC microwave power amplifier.A. Tazzoli, I. Rossetto, E. Zanoni, D. Yufeng, T. Tomasi, and G. Meneghesso. Microelectron. Reliab., 51 (9-11): 1602-1607 (2011)Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.I. Rossetto, M. Meneghini, G. Meneghesso, and E. Zanoni. Microelectron. Reliab., 53 (9-11): 1456-1460 (2013)Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.I. Rossetto, F. Rampazzo, S. Gerardin, M. Meneghini, M. Bagatin, A. Zanandrea, A. Paccagnella, G. Meneghesso, E. Zanoni, C. Dua and 4 other author(s). ESSDERC, page 381-384. IEEE, (2014)

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Disambiguation of "Rossetto, Isabella"

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Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.

Please choose a person to relate this publication to

Silvana Rossetto

Isabella Schorsch

Isabella Kamp

Isabella Gayer

Isabella Kleiber

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Rossetto, Isabella"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.

Please choose a person to relate this publication to

Silvana Rossetto

Isabella Schorsch

Isabella Kamp

Isabella Gayer

Isabella Kleiber

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.