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Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.

I. Rossetto, M. Meneghini, G. Meneghesso, and E. Zanoni. Microelectron. Reliab., 53 (9-11): 1456-1460 (2013)

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Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Fest

Enrico Edinger

Other publications of authors with the same name

Improving the reliability and safety of automotive electronics.E. Zanoni, and P. Pavan. IEEE Micro, 13 (1): 30-48 (1993)Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.F. Danesin, F. Zanon, S. Gerardin, F. Rampazzo, G. Meneghesso, E. Zanoni, and A. Paccagnella. Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells.M. Barbato, M. Meneghini, A. Cester, A. Barbato, E. Zanoni, G. Meneghesso, G. Mura, D. Tonini, A. Voltan, and G. Cellere. IRPS, page 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.K. Mukherjee, C. Santi, G. Meneghesso, E. Zanoni, M. Meneghini, S. You, K. Geens, M. Borga, B. Bakeroot, and S. Decoutere. IRPS, page 1-5. IEEE, (2020)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.M. Boito, M. Fregolent, C. Santi, A. Abbisogni, S. Smerzi, I. Rossetto, F. Iucolano, G. Meneghesso, E. Zanoni, and M. Meneghini. IRPS, page 1-5. IEEE, (2024)Modeling of Substrate Noise Injected by Digital Libraries.S. Zanella, A. Neviani, E. Zanoni, P. Miliozzi, E. Charbon, C. Guardiani, L. Carloni, and A. Sangiovanni-Vincentelli. ISQED, page 488-492. IEEE Computer Society, (2001)Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.M. Meneghini, R. Silvestri, S. Dalcanale, D. Bisi, E. Zanoni, G. Meneghesso, P. Vanmeerbeek, A. Banerjee, and P. Moens. IRPS, page 2. IEEE, (2015)On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.A. Stockman, E. Canato, A. Tajalli, M. Meneghini, G. Meneghesso, E. Zanoni, P. Moens, and B. Bakeroot. IRPS, page 4. IEEE, (2018)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.A. Stocco, S. Dalcanale, F. Rampazzo, M. Meneghini, G. Meneghesso, J. Grünenpütt, B. Lambert, H. Blanck, and E. Zanoni. Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)Traps localization and analysis in GaN HEMTs.A. Chini, F. Soci, G. Meneghesso, M. Meneghini, and E. Zanoni. Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)

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Disambiguation of "Zanoni, Enrico"

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Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.

Please choose a person to relate this publication to

Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Fest

Enrico Edinger

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Zanoni, Enrico"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.

Please choose a person to relate this publication to

Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Fest

Enrico Edinger

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.