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Mobility Enhancement of Monolayer MoS2 Transistors using Tensile-Stressed Silicon Nitride Capping Layers., , , , and . DRC, page 1-2. IEEE, (2022)Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_on$ using Post-Metal Anneal., , , and . DRC, page 1-2. IEEE, (2023)3D-stacked Strained SiGe/Ge Gate-All-Around (GAA) Structure Fabricated by 3D Ge Condensation., , , , , , , , and . DRC, page 249-250. IEEE, (2019)Ultrathin Gate Dielectric Enabled by Nanofog Aluminum Oxide on Monolayer MoS2., , , , , , , , , and . ESSDERC, page 1-4. IEEE, (2023)Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties., , , , , , , , , and . DRC, page 1-2. IEEE, (2022)Nanoscale MoS2 Transistors on Polyimide for Radio-Frequency Operation., , , , , , , , , and 2 other author(s). DRC, page 1-2. IEEE, (2024)Reliability Studies on Multilevel Interconnection with Intermetal Dielectric Air Gaps., , , , and . Microelectron. Reliab., 41 (9-10): 1631-1635 (2001)First Demonstration of Top-Gated ITO Transistors: Effect of Channel Passivation., , , , , , , and . DRC, page 1-2. IEEE, (2022)