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Disambiguation of "Shrivastava, Mayank"

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Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices.

, , , and . IRPS, page 6. IEEE, (2022)

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Mayank Tiwari

Mayank Kabra

Ashish Shrivastava

Mayank Agnihotri

Magan Bihari Shrivastava

 

Other publications of authors with the same name

Threshold Voltage Shift in a-Si: H Thin film Transistors under ESD stress Conditions., , , and . IRPS, page 1-6. IEEE, (2020)Are Argon and Nitrogen Gases Really Inert to Graphene Devices?, and . DRC, page 1-2. IEEE, (2022)Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete?, , , , and . VLSID, page 391-394. IEEE Computer Society, (2017)Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices., , , and . IRPS, page 6. IEEE, (2022)Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD Stress., , , and . IRPS, page 1-5. IEEE, (2023)Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETs., , , , and . IRPS, page 1-6. IEEE, (2023)Physical Insights into Phosphorene Transistor Degradation Under Exposure to Atmospheric Conditions and Electrical Stress., , , , , , , and . IRPS, page 1-4. IEEE, (2020)Contact and junction engineering in bulk FinFET technology for improved ESD/latch-up performance with design trade-offs and its implications on hot carrier reliability., , , and . IRPS, page 3. IEEE, (2018)Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs., , , , , and . IRPS, page 1-6. IEEE, (2024)Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTs., , , , , , , , and . IRPS, page 1-4. IEEE, (2023)