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Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD Stress.

, , , и . IRPS, стр. 1-5. IEEE, (2023)

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Mayank Tiwari

Mayank Kabra

Ashish Shrivastava

Mayank Agnihotri

Magan Bihari Shrivastava

 

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Threshold Voltage Shift in a-Si: H Thin film Transistors under ESD stress Conditions., , , и . IRPS, стр. 1-6. IEEE, (2020)Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD Stress., , , и . IRPS, стр. 1-5. IEEE, (2023)Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices., , , и . IRPS, стр. 6. IEEE, (2022)Are Argon and Nitrogen Gases Really Inert to Graphene Devices?, и . DRC, стр. 1-2. IEEE, (2022)Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete?, , , , и . VLSID, стр. 391-394. IEEE Computer Society, (2017)Physical Insights into Phosphorene Transistor Degradation Under Exposure to Atmospheric Conditions and Electrical Stress., , , , , , , и . IRPS, стр. 1-4. IEEE, (2020)Contact and junction engineering in bulk FinFET technology for improved ESD/latch-up performance with design trade-offs and its implications on hot carrier reliability., , , и . IRPS, стр. 3. IEEE, (2018)Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs., , , , , и . IRPS, стр. 1-6. IEEE, (2024)Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETs., , , , и . IRPS, стр. 1-6. IEEE, (2023)Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs., , и . IRPS, стр. 1-6. IEEE, (2020)