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Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications., , , , , , , , , и . ESSDERC, стр. 275-278. IEEE, (2021)Fundamental understanding of NBTI degradation mechanism in IGZO channel devices., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-7. IEEE, (2024)Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory., , , , , , , , , и 4 other автор(ы). IRPS, стр. 7. IEEE, (2024)Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays., , , , , , , , и . IMW, стр. 1-4. IEEE, (2023)Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification., , , , , , , , , и 1 other автор(ы). IMW, стр. 1-4. IEEE, (2024)Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM., , , , , и . ESSDERC, стр. 114-117. IEEE, (2015)Conductive filaments multiplicity as a variability factor in CBRAM., , , , , , и . IRPS, стр. 11. IEEE, (2015)Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament., , , , , , и . NVMTS, стр. 1-5. IEEE, (2017)Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-6. IEEE, (2024)Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm., , , , , , , , , и 14 other автор(ы). VLSI Technology and Circuits, стр. 292-293. IEEE, (2022)