From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs., , , , , , , , и . IRPS, стр. 6. IEEE, (2018)FDSOI: From substrate to devices and circuit applications., , , , и . ESSCIRC, стр. 45-51. IEEE, (2010)22FD-SOI Variability Improvement Thanks to SmartCut Thickness Control at Atomic Scale., , , , , , и . ESSDERC, стр. 64-65. IEEE, (2019)Fluorine Plasma Treatment-Enabled ITO Transistors: Excellent Reliability and Comprehensive Understanding of Temperature Dependence from 77K to 375K., , , , , , , , , и 1 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2024)Smart Cut™ technology: from Substrate Enginnering to Advanced 3D Integration., , и . ICICDT, стр. 81-83. IEEE, (2022)Strained silicon on insulator substrates for fully depleted application., , , , , , , , , и . ICICDT, стр. 1-4. IEEE, (2012)Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections., , , , , , , , , и 15 other автор(ы). VLSI Technology and Circuits, стр. 330-331. IEEE, (2022)Low Temperature SmartCutTM enables High Density 3D SoC Applications., , и . ICICDT, стр. 1-2. IEEE, (2019)Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F2 High-Density Integration., , , , , , , , и . VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit., , , , , , , , , и 4 other автор(ы). ISCAS, стр. 1703-1706. IEEE, (2010)