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Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs., , , , , , , , and . IRPS, page 6. IEEE, (2018)FDSOI: From substrate to devices and circuit applications., , , , and . ESSCIRC, page 45-51. IEEE, (2010)22FD-SOI Variability Improvement Thanks to SmartCut Thickness Control at Atomic Scale., , , , , , and . ESSDERC, page 64-65. IEEE, (2019)Fluorine Plasma Treatment-Enabled ITO Transistors: Excellent Reliability and Comprehensive Understanding of Temperature Dependence from 77K to 375K., , , , , , , , , and 1 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2024)Smart Cut™ technology: from Substrate Enginnering to Advanced 3D Integration., , and . ICICDT, page 81-83. IEEE, (2022)Strained silicon on insulator substrates for fully depleted application., , , , , , , , , and . ICICDT, page 1-4. IEEE, (2012)Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections., , , , , , , , , and 15 other author(s). VLSI Technology and Circuits, page 330-331. IEEE, (2022)Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F2 High-Density Integration., , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)Low Temperature SmartCutTM enables High Density 3D SoC Applications., , and . ICICDT, page 1-2. IEEE, (2019)3D monolithic integration: Stacking technology and applications., , , and . ICICDT, page 1-3. IEEE, (2015)