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Physics-based device aging modelling framework for accurate circuit reliability assessment., , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2021)Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks., , , , , , , , , и . IRPS, стр. 12-1. IEEE, (2022)Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery., , , , , , , , , и 7 other автор(ы). IRPS, стр. 1-6. IEEE, (2022)Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics., , , , , , , , и . CoRR, (2024)Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements., , , , , , , , , и . VLSI Technology and Circuits, стр. 340-342. IEEE, (2022)Degradation mechanisms and lifetime assessment of Ge Vertical PIN photodetectors., , , , , , , и . OFC, стр. 1-3. IEEE, (2022)A BSIM-Based Predictive Hot-Carrier Aging Compact Model., , , , , , , , , и . IRPS, стр. 1-9. IEEE, (2021)Fundamental understanding of NBTI degradation mechanism in IGZO channel devices., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-7. IEEE, (2024)Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics., , , , , , , , и . IRPS, стр. 4. IEEE, (2022)