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Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs., , , , , , , , , and . IRPS, page 6. IEEE, (2022)Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors., , , , , , , , , and 2 other author(s). IRPS, page 10. IEEE, (2022)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , and 1 other author(s). ESSDERC, page 262-265. IEEE, (2019)On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors., , , , , , , , and . IRPS, page 11. IEEE, (2022)Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery., , , , , , , , , and 7 other author(s). IRPS, page 1-6. IEEE, (2022)Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs., , , , , , , , , and 1 other author(s). IRPS, page 1-7. IEEE, (2019)Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets., , , , , , , , , and 1 other author(s). IRPS, page 5. IEEE, (2022)Origins and implications of increased channel hot carrier variability in nFinFETs., , , , , , , , , and 11 other author(s). IRPS, page 3. IEEE, (2015)Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs., , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures., , , , , , , , , and . IRPS, page 1-6. IEEE, (2020)