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Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits., , , , and . IEEE Trans. Very Large Scale Integr. Syst., 22 (2): 280-285 (2014)A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS., , , , , and . A-SSCC, page 157-160. IEEE, (2018)Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications., , , , , , , , , and 6 other author(s). ICICDT, page 1-4. IEEE, (2012)Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology., , , , and . ICICDT, page 1-4. IEEE, (2015)Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling., , , , , , , , and . ISCAS, page 2249-2252. IEEE, (2011)Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology., , , , , , , , , and . IRPS, page 3. IEEE, (2015)Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling., , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)Impact of random telegraph noise on ring oscillators evaluated by circuit-level simulations., , , , and . ICICDT, page 1-4. IEEE, (2015)A Compact Physics Analytical Model for Hot-Carrier Degradation., , , , , , , , and . IRPS, page 1-7. IEEE, (2020)BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic., , , , , , and . Microelectron. Reliab., 52 (9-10): 1932-1935 (2012)