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Disambiguation of "Zanoni, Enrico"

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Traps localization and analysis in GaN HEMTs.

, , , , and . Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)

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Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Körner

Enrico Meier

 

Other publications of authors with the same name

Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors., , , , , , and . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)Improving the reliability and safety of automotive electronics., and . IEEE Micro, 13 (1): 30-48 (1993)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells., , , , , , , , , and . IRPS, page 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors., , , , , , , , , and . IRPS, page 1-5. IEEE, (2020)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach., , , , , , , , , and . IRPS, page 1-5. IEEE, (2024)Current crowding as a major cause for InGaN LED degradation at extreme high current density., , , , , and . IECON, page 1-6. IEEE, (2021)Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs., , , , , , and . ESSDERC, page 389-392. IEEE, (2014)Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting., , , , , , and . RTSI, page 154-156. IEEE, (2015)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability., , , , , , , , , and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Degradation of vertical GaN FETs under gate and drain stress., , , , , , and . IRPS, page 4. IEEE, (2018)