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Migrating from planar to FinFET for further CMOS scaling: SOI or bulk?

, , , , , , , , , , , , , , , , , , и . ESSCIRC, стр. 84-87. IEEE, (2009)

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Thomas Thomas

Thomas Baron

Untersuchungen an ungeschädigten und durch Pilzbefall geschädigten Nadelholzbauteilen mit ausgewählten Prüfverfahren. TU Dresden, (2009)

Thomas Harasim

Die Rolle des nucleostemin-Gens in dem Prozess der Ribosomenbiogenese. Uni München, (2009)

Thomas Böttcher

Naturstoffe und ihre Derivate als molekulare Sonden: Identifikation ihrer Angriffsziele und Inhibition der Virulenz in pathogenen Bakterien. Uni München, (2009)

Thomas Potinecke

Methode zur Systematisierung von Teilprozessen in der Produktentwicklung beim Einsatz von CAx-Technologien. Uni Stuttgart, (2009)
 

Другие публикации лиц с тем же именем

On the ballistic ratio in 14nm-Node FinFETs., , , , и . ESSDERC, стр. 176-179. IEEE, (2017)Impact of fin shape variability on device performance towards 10nm node., , , , , , , , , и 3 other автор(ы). ICICDT, стр. 1-4. IEEE, (2015)Migrating from planar to FinFET for further CMOS scaling: SOI or bulk?, , , , , , , , , и 9 other автор(ы). ESSCIRC, стр. 84-87. IEEE, (2009)Towards high performance sub-10nm finW bulk FinFET technology., , , , , , , , , и 10 other автор(ы). ESSDERC, стр. 131-134. IEEE, (2016)Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning., , , , , , , , , и 30 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies., , , , , , , , , и . IRPS, стр. 1-7. IEEE, (2019)STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process., , , , , , , , и . ESSDERC, стр. 159-162. IEEE, (2013)Origins and implications of increased channel hot carrier variability in nFinFETs., , , , , , , , , и 11 other автор(ы). IRPS, стр. 3. IEEE, (2015)Methodology for extracting the characteristic capacitances of a power MOSFET transistor, using conventional on-wafer testing techniques., , , и . ESSDERC, стр. 221-225. IEEE, (2012)Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI., , , , , и . IRPS, стр. 3. IEEE, (2015)