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Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI.

K. Akyel, L. Ciampolini, O. Thomas, D. Turgis, and G. Ghibaudo. ESSDERC, page 94-97. IEEE, (2014)

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Wahyudi David

Florian Bodo David

Jens-Ulrich Davids

Joachim David

Heinz David

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Proposal of a new ultra low leakage 10T sub threshold SRAM bitcell.A. Feki, B. Allard, D. Turgis, J. Lafont, and L. Ciampolini. ISOCC, page 470-474. IEEE, (2012)Optimization of a voltage sense amplifier operating in ultra wide voltage range with back bias design techniques in 28nm UTBB FD-SOI technology.G. Moritz, B. Giraud, J. Noel, D. Turgis, and A. Grover. ICICDT, page 53-56. IEEE, (2013)27.1 A 460MHz at 397mV, 2.6GHz at 1.3V, 32b VLIW DSP, embedding FMAX tracking.R. Wilson, E. Beigné, P. Flatresse, A. Valentian, F. Abouzeid, T. Benoist, C. Bernard, S. Bernard, O. Billoint, S. Clerc and 12 other author(s). ISSCC, page 452-453. IEEE, (2014)Efficient yield estimation through generalized importance sampling with application to NBL-assisted SRAM bitcells.L. Ciampolini, J. Lafont, F. Drissi, J. Morin, D. Turgis, X. Jonsson, C. Desclèves, and J. Nguyen. ICCAD, page 89. ACM, (2016)Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI.K. Akyel, L. Ciampolini, O. Thomas, D. Turgis, and G. Ghibaudo. ESSDERC, page 94-97. IEEE, (2014)RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs.J. Nguyen, D. Turgis, D. Bonciani, B. Lhomme, Y. Carminati, O. Callen, G. Guirleo, L. Ciampolini, and G. Ghibaudo. NATW, page 28-33. IEEE, (2016)Energy-Efficient 4T SRAM Bitcell with 2T Read-Port for Ultra-Low-Voltage Operations in 28 nm 3D Monolithic CoolCubeTM Technology.R. Boumchedda, J. Noel, B. Giraud, A. Makosiej, M. Rios, E. Esmanhotto, E. Bourde-Cicé, M. Bellet, D. Turgis, and E. Beigné. NANOARCH, page 131-137. ACM, (2018)Low Standby Power Capacitively Coupled Sense Amplifier for wide voltage range operation of dual rail SRAMs.A. Grover, P. Kumar, M. Daud, G. Visweswaran, C. Parthasarathy, J. Noel, D. Turgis, B. Giraud, and G. Moritz. ICICDT, page 1-4. IEEE, (2015)Improving Ge-rich GST ePCM reliability through BEOL engineering.A. Redaelli, A. Gandolfo, G. Samanni, E. Gomiero, E. Petroni, L. Scotti, A. Lippiello, P. Mattavelli, J. Jasse, D. Codegoni and 27 other author(s). ESSDERC, page 231-234. IEEE, (2021)28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications.R. Ranica, N. Planes, V. Huard, O. Weber, D. Noblet, D. Croain, F. Giner, S. Naudet, P. Mergault, S. Ibars and 11 other author(s). VLSI Circuits, page 1-2. IEEE, (2016)

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Disambiguation of "Turgis, David"

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Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI.

Please choose a person to relate this publication to

Wahyudi David

Florian Bodo David

Jens-Ulrich Davids

Joachim David

Heinz David

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Turgis, David"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI.

Please choose a person to relate this publication to

Wahyudi David

Florian Bodo David

Jens-Ulrich Davids

Joachim David

Heinz David

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
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APA
Chicago
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Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI.