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Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs., , , , , and . ICECS, page 953-956. IEEE, (2012)Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions., , , , , and . Microelectron. Reliab., 41 (9-10): 1295-1300 (2001)Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator., , , , , , , and . ESSDERC, page 166-169. IEEE, (2018)Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs., , , , , and . ESSDERC, page 142-145. IEEE, (2016)Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices., , , , , , , , , and 2 other author(s). ESSDERC, page 246-249. IEEE, (2015)Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR., , , , and . ESSDERC, page 242-245. IEEE, (2015)Guest Editorial., and . Microelectron. Reliab., 43 (8): 1173 (2003)Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI., , , , , , , and . ISCAS, page 1452-1455. IEEE, (2013)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2021)Electrical noise and RTS fluctuations in advanced CMOS devices., and . Microelectron. Reliab., 42 (4-5): 573-582 (2002)