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Disambiguation of "Puglisi, Francesco Maria"

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Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs.

, , , , , , , and . IRPS, page 1-5. IEEE, (2020)

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To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Michele Francesco Maria Genoni

Francesco Bettella

Protein secondary structure prediction using optimized scoring functions: a comparative statistical method. FU Berlin, (2009)

Petra Marialke-Kandaouroff

Manuel Mariadasa

Boris Mariacher

 

Other publications of authors with the same name

Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS., , , and . ESSDERC, page 246-249. IEEE, (2014)Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memories.. NVMTS, page 1-5. IEEE, (2017)Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide., , and . ESSDERC, page 368-371. IEEE, (2022)Random Telegraph Signal noise properties of HfOx RRAM in high resistive state., , , , and . ESSDERC, page 274-277. IEEE, (2012)Self-consistent Automated Parameter Extraction of RRAM Physics-Based Compact Model., , and . ESSDERC, page 316-319. IEEE, (2022)Variability and sensitivity to process parameters variations in InGaAs dual-gate ultra-thin body MOSFETs: A scaling perspective., , , and . PATMOS, page 1-5. IEEE, (2017)A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules., , , , , and . IEEE Trans. Neural Networks Learn. Syst., 35 (4): 5117-5129 (April 2024)Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights., , , , , , , , , and 1 other author(s). Neuromorph. Comput. Eng., 2 (2): 24001 (2022)A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs., , and . IRPS, page 1-6. IEEE, (2023)A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design., , , and . ESSDERC, page 204-207. IEEE, (2017)