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Disambiguation of "Meneghini, Matteo"

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Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs.

, , , , , , , and . IRPS, page 1-5. IEEE, (2020)

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Stephan Meneghini

Thomas Meneghini

Matteo Garavoglia

Marco Matteo

Matteo Bertini

 

Other publications of authors with the same name

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron., , , , , and . ESSDERC, page 130-133. IEEE, (2017)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2021)Modeling challenges for high-efficiency visible light-emitting diodes., , , , , , , , , and 3 other author(s). RTSI, page 157-160. IEEE, (2015)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells., , , , , , , , , and . IRPS, page 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors., , , , , , , , , and . IRPS, page 1-5. IEEE, (2020)On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach., , , , , , , , , and . IRPS, page 1-5. IEEE, (2024)Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs., , , , , , and . ESSDERC, page 389-392. IEEE, (2014)High performance high reliability AlN/GaN DHFET., , , , , , , and . ESSDERC, page 146-149. IEEE, (2014)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability., , , , , , , , , and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Degradation of vertical GaN FETs under gate and drain stress., , , , , , and . IRPS, page 4. IEEE, (2018)