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Off-state stress degradation mechanism on advanced p-MOSFETs., , , , , , , , and . ICICDT, page 1-4. IEEE, (2015)Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors., , , , , , , , , and 8 other author(s). ESSDERC, page 190-193. IEEE, (2013)Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes., , , , , , , , , and 5 other author(s). Microprocess. Microsystems, 39 (8): 1039-1051 (2015)Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs., , , , , , , and . ICICDT, page 1-4. IEEE, (2015)The defect-centric perspective of device and circuit reliability - From individual defects to circuits., , , , , , , , , and 5 other author(s). ESSDERC, page 218-225. IEEE, (2015)Positive bias temperature instabilities on sub-nanometer EOT FinFETs., , , , and . Microelectron. Reliab., 51 (9-11): 1521-1524 (2011)Impact of Off State Stress on advanced high-K metal gate NMOSFETs., , , , , , and . ESSDERC, page 365-368. IEEE, (2014)