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Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology.

, , , , , , , , , and . IRPS, page 3. IEEE, (2015)

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The defect-centric perspective of device and circuit reliability - From individual defects to circuits., , , , , , , , , and 5 other author(s). ESSDERC, page 218-225. IEEE, (2015)Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper., , , , , , , , and . IRPS, page 1-10. IEEE, (2023)Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies., , , , , , , , , and 10 other author(s). IRPS, page 1-6. IEEE, (2021)Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs., , , , , , , , , and . IRPS, page 6. IEEE, (2022)Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress., , , , , , , , , and 1 other author(s). IRPS, page 10. IEEE, (2022)Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling., , , , , , , , , and 15 other author(s). ICICDT, page 145-148. IEEE, (2018)SILC and TDDB reliability of novel low thermal budget RMG gate stacks., , , , and . IRPS, page 1-6. IEEE, (2024)Fundamental understanding of NBTI degradation mechanism in IGZO channel devices., , , , , , , , , and 1 other author(s). IRPS, page 1-7. IEEE, (2024)Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics., , , , , , , , , and . IRPS, page 36. IEEE, (2024)Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections., , , , , , , , , and 15 other author(s). VLSI Technology and Circuits, page 330-331. IEEE, (2022)