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Experimental fabrication of an ESF3 floating gate flash cell in an FD-SOI process., , , , , , and . ESSDERC, page 356-359. IEEE, (2022)Integration of hafnium oxide on epitaxial SiGe for p-type ferroelectric FET application, , , , , , , , , and 2 other author(s). IEEE Electron Device Lett., 41 (12): 1762-1765 (Oct 15, 2020)Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications., , , , , , , , , and 3 other author(s). IMW, page 1-4. IEEE, (2023)Reliability Assesement of Ferroelectric nvCAP for Small-Signal Capacitive Read-Out., , , , and . IRPS, page 1-5. IEEE, (2024)Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory., , , , , , , , and . ESSDERC, page 118-121. IEEE, (2019)Performance Improvement on HfO2-Based 1T Ferroelectric NVM by Electrical Preconditioning., , , , , , , , and . IRPS, page 1-4. IEEE, (2019)Performance and Reliability of Technology Qualified 34 Mb Split-Gate eFLASH Macro in 28 nm HKMG., , , , , , , , , and 14 other author(s). IMW, page 1-4. IEEE, (2024)Novel embedded single poly floating gate flash demonstrated in 22nm FDSOI technology., , , , , , , , and . IMW, page 1-4. IEEE, (2021)Charge trapping challenges of CMOS embedded complementary FeFETs., , , , , , , , , and . IMW, page 1-4. IEEE, (2024)Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate., , , , , , , , , and 15 other author(s). CoRR, (2024)