( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
Impact of mechanical strain on wakeup of HfO2 ferroelectric memory.

, , , , , , , , и . IRPS, стр. 1-6. IEEE, (2021)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Sergiu Langa

Lilia Clima

Sergiu Doniga

Sergiu Albu

Sergiu Thiewens

 

Другие публикации лиц с тем же именем

Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament., , , , , , и . NVMTS, стр. 1-5. IEEE, (2017)High-k Dielectrics and Metal Gates for Future Generation Memory Devices, , , , , , , , , и 28 other автор(ы). ECS Transactions, 19 (1): 29--40 (2009)Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics., , , , , , , , и . CoRR, (2024)Impact of mechanical strain on wakeup of HfO2 ferroelectric memory., , , , , , , , и . IRPS, стр. 1-6. IEEE, (2021)New Insights into the Imprint Effect in FE-HfO2 and its Recovery., , , , , , , , , и 3 other автор(ы). IRPS, стр. 1-7. IEEE, (2019)Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory., , , , , , , , , и 4 other автор(ы). IRPS, стр. 7. IEEE, (2024)Doped GeSe materials for selector applications., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 168-171. IEEE, (2017)Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode., , , , , , , , , и 3 other автор(ы). VLSI Technology and Circuits, стр. 312-313. IEEE, (2022)Modeling and spectroscopy of ovonic threshold switching defects., , , , , , и . IRPS, стр. 1-5. IEEE, (2021)