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Disambiguation of "Arreghini, Antonio"

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Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance.

, , , , , , , , , and . IRPS, page 1-6. IEEE, (2024)

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Antonio Wünsch

Antonio Nuzzo

Antonio Galeano

Antonio Souto

Antonio Peter

 

Other publications of authors with the same name

Gate Side Injection Operating Mode for 3D NAND Flash Memories., , , , , , , , and . IMW, page 1-4. IEEE, (2024)Impact of Mechanical Stress on the Electrical Performance of 3D NAND., , , , , , and . IRPS, page 1-5. IEEE, (2019)Enabling 3D NAND Trench Cells for Scaled Flash Memories., , , , , , , , and . IMW, page 1-4. IEEE, (2023)High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction., , , , , , , , and . IMW, page 1-4. IEEE, (2022)Liquid Memory and the Future of Data Storage., , , , , , , , , and 6 other author(s). IMW, page 1-4. IEEE, (2022)Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND., , , , , , , , , and . IRPS, page 1-5. IEEE, (2024)Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance., , , , , , , , , and . IRPS, page 1-6. IEEE, (2024)Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash., , , , , , , , , and . IMW, page 1-4. IEEE, (2024)A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics., , , , , , , , and . IMW, page 1-4. IEEE, (2021)Characterization and modeling of Non volatile memory cells based on localized trapping materials.. University of Udine, Italy, (2008)