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A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology.

, , , , , , , , , и . IEEE J. Solid State Circuits, 44 (1): 148-154 (2009)

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Yih-Fen Wang-Hua

Yiheyis Tasissa

Gabriel Yihune

Ming-Yih Lin

Dong-Yih Lin

 

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2nd generation embedded DRAM with 4X lower self refresh power in 22nm Tri-Gate CMOS technology., , , , , , , , , и 2 other автор(ы). VLSIC, стр. 1-2. IEEE, (2014)A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology., , , , , , , , , и . IEEE J. Solid State Circuits, 44 (1): 148-154 (2009)An 89TOPS/W and 16.3TOPS/mm2 All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications., , , , , , , , , и 10 other автор(ы). ISSCC, стр. 252-254. IEEE, (2021)13.1 A 1Gb 2GHz embedded DRAM in 22nm tri-gate CMOS technology., , , , , , , , , и 2 other автор(ы). ISSCC, стр. 230-231. IEEE, (2014)15.3 A 3nm FinFET 4.3GHz 21.1Mb/mm2 Double-Pumping 1-Read and 1-Write Pseudo-2-Port SRAM with Folded-Bitline Multi-Bank Architecture., , , , , , , , и . ISSCC, стр. 280-282. IEEE, (2024)A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation., , , , , , , и . ISSCC, стр. 346-347. IEEE, (2010)15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications., , , , , , , и . ISSCC, стр. 242-244. IEEE, (2020)A 153Mb-SRAM Design with Dynamic Stability Enhancement and Leakage Reduction in 45nm High-Κ Metal-Gate CMOS Technology., , , , , , , , , и . ISSCC, стр. 376-377. IEEE, (2008)A 5-nm 254-TOPS/W 221-TOPS/mm2 Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations., , , , , , , , , и 8 other автор(ы). ISSCC, стр. 1-3. IEEE, (2022)15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm2 Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C., , , , , , , , , и 7 other автор(ы). ISSCC, стр. 288-290. IEEE, (2024)