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Disambiguation of "Ghibaudo, Gérard"

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New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs.

, , , , , , and . IRPS, page 1. IEEE, (2015)

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Gérard Gäfgen

Walter Gérard

Gérard Sprüssel

Bruno Gérard

Emilie Gérard

 

Other publications of authors with the same name

Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides., , , , , , and . Microelectron. Reliab., 45 (12): 1842-1854 (2005)Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors., , , and . Microelectron. Reliab., 41 (6): 855-860 (2001)Failures in ultrathin oxides: Stored energy or carrier energy driven?, , , , and . Microelectron. Reliab., 41 (9-10): 1367-1372 (2001)New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs., , , , , , and . IRPS, page 1. IEEE, (2015)Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs., , , , , , and . ESSDERC, page 73-76. IEEE, (2012)Electrical characterization of FDSOI CMOS devices.. ESSDERC, page 135-141. IEEE, (2016)Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices., , , , , , , , , and 5 other author(s). ESSDERC, page 144-147. IEEE, (2017)Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator., , , , , , , and . ESSDERC, page 166-169. IEEE, (2018)Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs., , , , , and . ESSDERC, page 142-145. IEEE, (2016)Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices., , , , , , , , , and 2 other author(s). ESSDERC, page 246-249. IEEE, (2015)