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Electrical characterization of FDSOI CMOS devices.

. ESSDERC, стр. 135-141. IEEE, (2016)

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Walter Gérard

Gérard Gäfgen

Gérard Sprüssel

Emilie Gérard

Bruno Gérard

 

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Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors., , , и . Microelectron. Reliab., 41 (6): 855-860 (2001)Failures in ultrathin oxides: Stored energy or carrier energy driven?, , , , и . Microelectron. Reliab., 41 (9-10): 1367-1372 (2001)Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides., , , , , , и . Microelectron. Reliab., 45 (12): 1842-1854 (2005)Electrical characterization of FDSOI CMOS devices.. ESSDERC, стр. 135-141. IEEE, (2016)Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices., , , , , , , , , и 5 other автор(ы). ESSDERC, стр. 144-147. IEEE, (2017)Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs., , , , , , и . ESSDERC, стр. 73-76. IEEE, (2012)New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs., , , , , , и . IRPS, стр. 1. IEEE, (2015)Guest Editorial., и . Microelectron. Reliab., 43 (8): 1173 (2003)Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions., , , , , и . Microelectron. Reliab., 41 (9-10): 1295-1300 (2001)Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs., , , , , и . ICECS, стр. 953-956. IEEE, (2012)