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Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory., , , , , , , , и . ESSDERC, стр. 118-121. IEEE, (2019)Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications., , , , , , , , , и 3 other автор(ы). IMW, стр. 1-4. IEEE, (2023)Reliability Assesement of Ferroelectric nvCAP for Small-Signal Capacitive Read-Out., , , , и . IRPS, стр. 1-5. IEEE, (2024)Computing with ferroelectric FETs: Devices, models, systems, and applications., , , , , , , , , и 9 other автор(ы). DATE, стр. 1289-1298. IEEE, (2018)Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices., , , , , , , , , и 2 other автор(ы). VLSI-SoC, стр. 180-183. IEEE, (2018)Characterization and modeling of innovative solid-state memory technologies.. Polytechnic University of Milan, Italy, (2016)Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays., , , и . ISCAS, стр. 1-5. IEEE, (2020)Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology., , , и . ISCAS, стр. 1-5. IEEE, (2018)Data regeneration and disturb immunity of T-RAM cells., , , , , , , , и . ESSDERC, стр. 46-49. IEEE, (2014)Impact of field cycling on HfO2 based non-volatile memory devices., , , , , , , , , и 10 other автор(ы). ESSDERC, стр. 364-368. IEEE, (2016)